FDC5614P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC5614P
Datasheet:
Description:
MOSFETs SOT-23-6 SMD/SMT P-Channel number of channels:1 1.6 W -60 V Continuous Drain Current (ID):3 A 24 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 105 MΩ |
| Height | 900 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | CASE 419AG−01 |
| Voltage | 60 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 2 A |
| Current Rating | -3 A |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 1.6 W |
| Threshold Voltage | -1.6 V |
| Number of Channels | 1 |
| Input capacitance | 759 pF |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 105 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 105 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1.6 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 6665
Distributors
pcbx
pcbxUnit Price$0.26179
Ext.Price$0.26179
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.26179 | $0.26179 |
| 10 | $0.23310 | $2.33100 |
| 50 | $0.20755 | $10.37750 |
| 100 | $0.18048 | $18.04800 |
| 500 | $0.15695 | $78.47500 |
| 1000 | $0.15108 | $151.08000 |
| 3000 | $0.14543 | $436.29000 |
| 5000 | $0.13749 | $687.45000 |